EV Group Partnes With NSI To Enable First Wafer-Level Heterogeneous Integration Of Gaas On Silicon For RF FRONT-End Module Manufacturing EVG announced that it has partnered with Ningbo Semiconductor International Corporation in the development of the industry’s first process technology platform for wafer-level heterogeneous integration of gallium arsenide (GaAs) on silicon for use in RF front-end module (FEM) manufacturing.
NSI and Etra Jointly Announce First Wafer-Level Heterogeneous System Integration of GaAs on Silicon RF FEM NINGBO, CHINA — Today, Ningbo Semiconductor International Corporation (NSI), a specialty semiconductor foundry in Ningbo, China, and Etra Semiconductor (Suzhou) Co., Ltd (Etra), an RF front-end devices and system solution provider in Suzhou, China,
NSI’s 200mm fab officially started operation, several projects launched. As the key park of Ningbo integrated circuit industry "one Park three base", "Core Harbor Town" once again ushered in a major development opportunity. Recently, SMIC Ningbo 200 mm special process (wafer/chip) N1 production line officially put into operation